Cathodoluminescence wavelength imaging study of clustering in InAs/GaAs self-assembled quantum dots

被引:0
|
作者
Rich, DH [1 ]
Zhang, C [1 ]
Mukhametzhanov, I [1 ]
Madhukar, A [1 ]
机构
[1] Univ So Calif, Dept Mat Sci & Engn, Photon Mat & Devices Lab, Los Angeles, CA 90089 USA
来源
MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF HETEROEPITAXIAL SEMICONDUCTOR THIN FILMS | 2000年 / 618卷
关键词
D O I
10.1557/PROC-618-173
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Cathodoluminescence wavelength imaging (CLWI) of InAs/GaAs self-assembled quantum dots (SAQDs) was performed to study the spatial variation in the spectral lineshape of the broadened quantum dot (QD) ensemble. The lineshape was found to vary on a scale of similar to mum, revealing attendant variations in the size distribution of SAQD clusters on this spatial scale. Energy variations in clusters of SAQDs are found to exhibit a spatial correlation with the efficiency of luminescence and the activation energy for thermal re-emission of carriers. A reduction in the energy variation of the QD clusters occurs when the thickness of the spacer layers in vertically self-organized samples is reduced or the number of stacks is increased. SAQDs were also prepared by punctuated island growth (PIG), in which deposition of the total desired amount is broken into two or more stages each separated by time delays. CLWI reveals a reduced variation in the energy of the dominant CL emission on a similar to mum spatial scale, correlating with a narrower size distribution of larger QDs for PIG, as measured in atomic force microscopy.
引用
收藏
页码:173 / 178
页数:6
相关论文
共 50 条
  • [21] Annealing effects of self-assembled InAs/GaAs quantum dots
    Inst of Semiconductors, CAS, Beijing, China
    Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 1997, 16 (06): : 455 - 458
  • [22] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    Zhanguo Wang
    Fengqi Liu
    Jiben Liang
    Bo Xu
    Science in China Series A: Mathematics, 2000, 43 : 861 - 870
  • [23] Self-assembled InAs/GaAs quantum dots and quantum dot laser
    王占国
    刘峰奇
    梁基本
    徐波
    ScienceinChina,SerA., 2000, Ser.A.2000 (08) : 861 - 870
  • [24] Optical charging of self-assembled InAs/GaAs quantum dots
    Karlsson, KF
    Moskalenko, ES
    Holtz, PO
    Monemar, B
    Schoenfeld, WV
    Garcia, JM
    Petroff, PM
    PHYSICA SCRIPTA, 2002, T101 : 140 - 142
  • [25] Electronic structure of InAs/GaAs self-assembled quantum dots
    Cusack, MA
    Briddon, PR
    Jaros, M
    PHYSICAL REVIEW B, 1996, 54 (04) : R2300 - R2303
  • [26] Gain characteristics of self-assembled InAs/GaAs quantum dots
    Arzberger, M
    Böhm, G
    Amann, MC
    Abstreiter, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (03): : 827 - 831
  • [27] Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
    Fry, PW
    Mowbray, DJ
    Itskevich, IE
    Skolnick, MS
    Barker, JA
    O'Reilly, EP
    Hopkinson, M
    Al-Khafaji, M
    David, JPR
    Cullis, AG
    Hill, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (02): : 497 - 502
  • [28] Anomalous photocurrent self-assembled InAs/GaAs quantum dots
    Monte, A. F. G.
    Qu, Fanyao
    Hopkinson, M.
    APPLIED PHYSICS LETTERS, 2008, 92 (18)
  • [29] Scaling properties of InAs/GaAs self-assembled quantum dots
    Ebiko, Y
    Muto, S
    Suzuki, D
    Itoh, S
    Yamakoshi, H
    Shiramine, K
    Haga, T
    Unno, K
    Ikeda, M
    PHYSICAL REVIEW B, 1999, 60 (11): : 8234 - 8237
  • [30] Coherent growth of InAs/GaAs self-assembled quantum dots
    Santalla, SN
    Kanyinda-Malu, C
    de la Cruz, RM
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 480 - 483