Transient linear dichroism in InAs/GaAs self-assembled quantum dots

被引：8
|
作者：
Tribollet, J [1 ]
Maingault, L [1 ]
Lemaître, A [1 ]
Sermage, B [1 ]
Gérard, JM [1 ]
Bernardot, F [1 ]
Testelin, C [1 ]
Chamarro, M [1 ]
机构：
[1] Univ Paris 06, Phys Solides Lab, Paris, France
来源：
8TH CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS-8) | 2004年
关键词：
D O I：
10.1002/pssc.200304045
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have shown that a transient linear dichroism can be photo-induced in self-assembled InAs/GaAs QDs along the [110] and [(110) over bar] crystallographic axes. The transient signal shows characteristic times of 42 ps and 1.1 ns at 1.35 eV. We have also performed time-resolved photoluminescence studies which lead to a lifetime between 700 ps and 1.4 ns, depending on the emission energy. By comparison of these results, we conclude that the spin relaxation time is seven times longer than the lifetime. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.
引用
收藏
页码：585 / 588
页数：4
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