Growth and electrical characterization of 4H-SiC epilayers

被引：1

作者：

Kimoto, T. ^{[1
]}

Danno, K. ^{[1
]}

Hori, T. ^{[1
]}

Matsunami, H. ^{[2
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Innovat Plaza Kyoto, JST, Kyoto 6158245, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

chemical vapor deposition; fast epitaxy; basal plane dislocation; deep level; carbon vacancy;

D O I：

10.4028/www.scientific.net/MSF.556-557.35

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Homoepitaxial growth of 4H-SiC and characterization of deep levels obtained mainly in the authors' group have been reviewed. The growth rate has been increased to 24 mu m/h with keeping very good surface morphology and low trap concentration on 8 degrees off-axis 4H-SiC(0001) by hot-wall chemical vapor deposition at 1650 degrees C. The increased growth rate has resulted in the enhanced conversion of basal-plane dislocations into threading edge dislocations in epilayers. The Z(1/2) and EH6/7 concentrations can be decreased to about 1x10(12) cm(-3) by increasing the C/Si ratio during CVD. Extensive investigation on as-grown and electron-irradiated epilayers indicates that both the Z(1/2) and EH6/7 centers may be attributed to the same origin related to carbon displacement, probably a carbon vacancy. Deep levels observed in as-grown and irradiated p-type 4H-SiC are also presented.

引用

页码：35 / +

页数：2

共 50 条

[41] Electrical characterization of laser-irradiated 4H-SiC wafer
Salama, I
Quick, NR
Kar, A
Chung, G
DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III, 2002, 719 : 73 - 78
[42] Electrical and optical characterization of 4H-SiC diodes for particle detection
Schifano, R
Vinattieri, A
Bruzzi, M
Miglio, S
Lagomarsino, S
Sciortino, S
Nava, F
JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
[43] Physical and electrical characterization of WN Schottky contacts on 4H-SiC
Noblanc, O
Arnodo, C
Cassette, S
Brylinski, C
Kakanakova-Georgieva, A
Marinova, T
Kassamakova, L
Kakanakov, R
Pecz, B
Sulyok, A
Radnoczi, G
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 817 - 820
[44] Electrical characterization of inhomogeneous Ti/4H-SiC Schottky contacts
Defives, D
Noblanc, O
Dua, C
Brylinski, C
Barthula, M
Meyer, F
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 395 - 401
[45] Electrical and optical characterization of 4H-SiC diodes for particle detection
Schifano, Ramón
Vinattieri, Anna
Bruzzi, Mara
Miglio, Stefania
Lagomarsino, Stefano
Sciortino, Silvio
Nava, Filippo
J Appl Phys, 10
[46] Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping
Feng, Gan
Suda, Jun
Kimoto, Tsunenobu
APPLIED PHYSICS LETTERS, 2008, 92 (22)
[47] Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability
El Hageali, Sami A.
Guthrey, Harvey
Johnston, Steven
Norman, Andrew
Soto, Jake
Odekirk, Bruce
Stahlbush, Robert E.
Mahadik, Nadeemullah A.
Gorman, Brian P.
Al-Jassim, Mowafak
JOURNAL OF APPLIED PHYSICS, 2023, 134 (07)
[48] Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
Yan, G. G.
Liu, X. F.
Shen, Z. W.
Wen, Z. X.
Chen, J.
Zhao, W. S.
Wang, L.
Zhang, F.
Zhang, X. H.
Li, X. G.
Sun, G. S.
Zeng, Y. P.
Wang, Z. G.
JOURNAL OF CRYSTAL GROWTH, 2019, 505 : 1 - 4
[49] Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
Booker, I. D.
Hassan, J.
Hallen, A.
Sveinbjornsson, E. O.
Kordina, O.
Bergman, J. P.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 285 - +
[50] Characterization of the defect evolution in thick heavily Al-doped 4H-SiC epilayers
Ji, Shiyang
Kojima, Kazutoshi
Ishida, Yuuki
Yamaguchi, Hirotaka
Saito, Shingo
Kato, Tomohisa
Tsuchida, Hidekazu
Yoshida, Sadafumi
Okumura, Hajime
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 151 - +

← 1 2 3 4 5 →