Growth and electrical characterization of 4H-SiC epilayers

被引：1

作者：

Kimoto, T. ^{[1
]}

Danno, K. ^{[1
]}

Hori, T. ^{[1
]}

Matsunami, H. ^{[2
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Innovat Plaza Kyoto, JST, Kyoto 6158245, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

chemical vapor deposition; fast epitaxy; basal plane dislocation; deep level; carbon vacancy;

D O I：

10.4028/www.scientific.net/MSF.556-557.35

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Homoepitaxial growth of 4H-SiC and characterization of deep levels obtained mainly in the authors' group have been reviewed. The growth rate has been increased to 24 mu m/h with keeping very good surface morphology and low trap concentration on 8 degrees off-axis 4H-SiC(0001) by hot-wall chemical vapor deposition at 1650 degrees C. The increased growth rate has resulted in the enhanced conversion of basal-plane dislocations into threading edge dislocations in epilayers. The Z(1/2) and EH6/7 concentrations can be decreased to about 1x10(12) cm(-3) by increasing the C/Si ratio during CVD. Extensive investigation on as-grown and electron-irradiated epilayers indicates that both the Z(1/2) and EH6/7 centers may be attributed to the same origin related to carbon displacement, probably a carbon vacancy. Deep levels observed in as-grown and irradiated p-type 4H-SiC are also presented.

引用

页码：35 / +

页数：2

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