The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

被引：0

作者：

VanderStricht, W ^{[1
]}

Moerman, I ^{[1
]}

Demeester, P ^{[1
]}

Crawley, JA ^{[1
]}

Thrush, EJ ^{[1
]}

Middleton, PG ^{[1
]}

Cowan, CT ^{[1
]}

ODonnell, KP ^{[1
]}

机构：

[1] STATE UNIV GHENT,IMEC,DEPT INFORMAT TECHNOL,B-9000 GHENT,BELGIUM

来源：

GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：231 / 236

页数：6

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