Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

被引：0
|
作者：
Yang, K [1 ]
Zhang, R [1 ]
Shen, B [1 ]
Qin, LH [1 ]
Chen, ZZ [1 ]
Zheng, YD [1 ]
Huang, ZC [1 ]
Chen, JC [1 ]
机构：
[1] UNIV MARYLAND,DEPT ELECT ENGN,CATONSVILLE,MD 21228
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The structural and optical properties of single crystal hexagonal GaN films on (0001) sapphire grown by metalorganic chemical vapor deposition was investigated. The energy gap of hexagonal GaN was determined as 3.39 eV by optical transmission and 3.400 eV by photoreflectance. Raman scattering spectra were employed to study the phonon modes of the GaN film. The properties of LO phonon-plasmon coupled modes were further studied, and the carrier concentration and damping constant were determined by line-shape fitting of the coupled modes.
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页码：923 / 926
页数：4
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