Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn) As

被引：8
|
作者：
Adell, J. [1 ,2 ]
Ulfat, I. [1 ]
Ilver, L. [1 ]
Sadowski, J. [3 ,4 ]
Karlsson, K. [5 ]
Kanski, J. [1 ]
机构：
[1] Chalmers Univ Technol, Dept Appl Phys, SE-41296 Gothenburg, Sweden
[2] Univ Karachi, Dept Phys, Karachi 75270, Pakistan
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[4] Lund Univ, MAX Lab, SE-22100 Lund, Sweden
[5] Univ Skovde, Dept Life Sci, SE-54128 Skovde, Sweden
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 08期
基金：
瑞典研究理事会;
关键词：
MAGNETIC-PROPERTIES; TEMPERATURE; (GA; MN)AS; DEFECTS; GAMNAS;
D O I：
10.1088/0953-8984/23/8/085003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn) As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn) As/GaAs interface.
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页数：4
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