Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn) As

被引：8

作者：

Adell, J. ^{[1
,2
]}

Ulfat, I. ^{[1
]}

Ilver, L. ^{[1
]}

Sadowski, J. ^{[3
,4
]}

Karlsson, K. ^{[5
]}

Kanski, J. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Appl Phys, SE-41296 Gothenburg, Sweden

[2] Univ Karachi, Dept Phys, Karachi 75270, Pakistan

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Lund Univ, MAX Lab, SE-22100 Lund, Sweden

[5] Univ Skovde, Dept Life Sci, SE-54128 Skovde, Sweden

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 08期

基金：

瑞典研究理事会;

关键词：

MAGNETIC-PROPERTIES; TEMPERATURE; (GA; MN)AS; DEFECTS; GAMNAS;

D O I：

10.1088/0953-8984/23/8/085003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn) As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn) As/GaAs interface.

引用

页数：4

共 50 条

[31] Clustering of Mn in (Ga,Mn)As
Raebiger, H
Ayuela, A
von Boehm, J
Nieminen, RM
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2005, 290 : 1398 - 1401
[32] Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack -: art. no. 027203
Rüster, C
Gould, C
Jungwirth, T
Sinova, J
Schott, GM
Giraud, R
Brunner, K
Schmidt, G
Molenkamp, LW
PHYSICAL REVIEW LETTERS, 2005, 94 (02)
[33] Diffusion of Interstitial Mn in the Dilute Magnetic Semiconductor (Ga,Mn)As: The Effect of a Charge State
Baykov, V. I.
Korzhavyi, P. A.
Johansson, B.
PHYSICAL REVIEW LETTERS, 2008, 101 (17)
[34] GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions
Sadowski, Janusz
Dluzewski, Piotr
Kret, Slawomir
Janik, Elzbieta
Lusakowska, Elzbieta
Kanski, Janusz
Presz, Adam
Terki, Ferial
Charar, Salam
Tang, Dong
NANO LETTERS, 2007, 7 (09) : 2724 - 2728
[35] Memory effect in a system of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
Wang, W. Z.
Deng, J. J.
Lu, J.
Sun, B. Q.
Zhao, J. H.
APPLIED PHYSICS LETTERS, 2007, 91 (20)
[36] Planar hall effect in ferromagnetic (Ga,Mn)As/GaAs superlattices
Wesela, W.
Wosinski, T.
Makosa, A.
Figielski, T.
Sadowski, J.
Terki, F.
Charar, S.
ACTA PHYSICA POLONICA A, 2007, 112 (02) : 369 - 373
[37] Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate
Matsukura, Fumihiro
Ohno, Hideo
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (09)
[38] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Ohno, H
Shen, A
Matsukura, F
Oiwa, A
Endo, A
Katsumoto, S
Iye, Y
APPLIED PHYSICS LETTERS, 1996, 69 (03) : 363 - 365
[39] Magnetotransport properties of (Ga,Mn)As grown on GaAs(411)A substrates
Omiya, T
Matsukura, F
Shen, A
Ohno, Y
Ohno, H
PHYSICA E, 2001, 10 (1-3): : 206 - 209
[40] Lattice parameter and hole density of (Ga,Mn)As on GaAs(311)A
Daeubler, J
Glunk, M
Schoch, W
Limmer, W
Sauer, R
APPLIED PHYSICS LETTERS, 2006, 88 (05) : 1 - 3

← 1 2 3 4 5 →