Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn) As

被引：8

作者：

Adell, J. ^{[1
,2
]}

Ulfat, I. ^{[1
]}

Ilver, L. ^{[1
]}

Sadowski, J. ^{[3
,4
]}

Karlsson, K. ^{[5
]}

Kanski, J. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Appl Phys, SE-41296 Gothenburg, Sweden

[2] Univ Karachi, Dept Phys, Karachi 75270, Pakistan

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Lund Univ, MAX Lab, SE-22100 Lund, Sweden

[5] Univ Skovde, Dept Life Sci, SE-54128 Skovde, Sweden

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 08期

基金：

瑞典研究理事会;

关键词：

MAGNETIC-PROPERTIES; TEMPERATURE; (GA; MN)AS; DEFECTS; GAMNAS;

D O I：

10.1088/0953-8984/23/8/085003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn) As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn) As/GaAs interface.

引用

页数：4

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