Electroluminescence Characterization of (20(2)over-bar1) InGaN/GaN Light Emitting Diodes with Various Wavelengths

被引：24

作者：

Chung, Roy B. ^{[1
]}

Lin, You-Da ^{[2
]}

Koslow, Ingrid ^{[1
]}

Pfaff, Nathan ^{[1
]}

Ohta, Hiroaki ^{[1
]}

Ha, Junseok ^{[1
]}

DenBaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 07期

关键词：

BULK GAN SUBSTRATE; HIGH-POWER; QUANTUM-WELLS; SINGLE; POLARIZATION;

D O I：

10.1143/JJAP.49.070203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical characteristics of InGaN/GaN light emitting diodes (LEDs) grown on (20 (2) over bar1) bulk GaN substrates with wavelengths 469, 487, 510, and 528 nm were investigated. From 2 to 100 mA, the peak emission wavelength for green LEDs blue-shifted by 6.2 nm. Emission spectra widths were almost independent of the injection current. These results suggest that (20 (2) over bar1) LEDs have a smaller polarization field and smaller indium fluctuations in the quantum wells. Optical polarization ratios for the LEDs varied between 0.4 and 0.5, which are larger than reported values. A weak dependence of the polarization ratio on the indium composition was observed. (C) 2010 The Japan Society of Applied Physics

引用

页码：0702031 / 0702033

页数：3

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