Semipolar (20(2)over-bar(1)over-bar) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

被引：309
|
作者：
Feezell, Daniel F. [1 ]
Speck, James S. [2 ]
DenBaars, Steven P. [2 ]
Nakamura, Shuji [2 ]
机构：
[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
JOURNAL OF DISPLAY TECHNOLOGY | 2013年 / 9卷 / 04期
基金：
美国国家科学基金会;
关键词：
Efficiency droop; gallium nitride; light-emitting diode; nonpolar; semipolar; solid-state lighting; POLARIZATION;
D O I：
10.1109/JDT.2012.2227682
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work examines the effects of polarization-related electric fields on the energy band diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum wells on various crystal orientations, including polar (0001) (c-plane), semipolar (20 (2) over bar1), semipolar (20 (2) over bar(1) over bar), and non-polar (10 (1) over bar0) (m-plane). Based on simulations, we show that the semipolar (20 (2) over bar(1) over bar) orientation exhibits excellent potential for the development of high-efficiency, low-droop light-emitting diodes (LEDs). We then present recent advancements in crystal growth, optical performance, and thermal performance of semipolar (20 (2) over bar(1) over bar) LEDs. Finally, we demonstrate a low-droop, high-efficiency single-quantum-well blue semipolar (20 (2) over bar(1) over bar) LED with an external quantum efficiency of more than 50% at 100 A/cm(2).
引用
收藏
页码：190 / 198
页数：9
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