Optical polarization characteristics of semipolar (30(3)over-bar1) and (30(3)over-bar(1)over-bar) InGaN/GaN light-emitting diodes

被引：27
|
作者：
Zhao, Yuji [1 ]
Yan, Qimin [2 ]
Feezell, Daniel [2 ]
Fujito, Kenji [3 ]
Van de Walle, Chris G. [2 ]
Speck, James S. [2 ]
DenBaars, Steven P. [1 ,2 ]
Nakamura, Shuji [1 ,2 ]
机构：
[1] Univ Calif Santa Barbara, Elect Comp & Engn Dept, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan
来源：
OPTICS EXPRESS | 2013年 / 21卷 / 01期
关键词：
GAN;
D O I：
10.1364/OE.21.000A53
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Linear polarized electroluminescence was investigated for semipolar (30 (3) over bar1) and (30 (3) over bar(1) over bar) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k.p method for the above two planes. The theoretical calculations are consistent with the experimental results. (C) 2012 Optical Society of America
引用
收藏
页码：A53 / A59
页数：7
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