Polarization fields in semipolar (20(1)over-bar(1)over-bar) and (20(2)over-bar1) InGaN light emitting diodes

被引：0
|
作者：
Freytag, Stefan [1 ]
Winkler, Michael [1 ]
Goldhahn, Ruediger [1 ]
Wernicke, Tim [2 ]
Rychetsky, Monir [2 ]
Koslow, Ingrid L. [2 ]
Kneissl, Michael [2 ]
Dinh, Duc, V [3 ]
Corbett, Brian [3 ]
Parbrook, Peter J. [3 ]
Feneberg, Martin [1 ]
机构：
[1] Otto von Guericke Univ, Inst Phys, Univ Pl 2, D-39106 Magdeburg, Germany
[2] Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, D-10623 Berlin, Germany
[3] Univ Coll Cork, Tyndall Natl Inst, Cork T12 R5CP, Ireland
来源：
APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 06期
基金：
爱尔兰科学基金会;
关键词：
QUANTUM-WELLS; MODEL;
D O I：
10.1063/1.5134952
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InxGa1-xN/GaN multiple quantum well structures (x = 0.13 and 0.18) embedded into p-i-n diodes on (20 (2) over bar(1) over bar) and (20 (2) over bar1) oriented GaN substrates were investigated by electroreflectance, photocurrent, and electroluminescence. Transition energies in absorption and emission experiments were measured as a function of the polarization orientation of light and applied bias voltage. The results were analyzed by a perturbation theoretical model to determine polarization fields. For the (20 (2) over bar(1) over bar) sample (x = 0.18), the flatband voltage is found at thorn1V corresponding to a polarization field of -458 kV/cm. For the (20 (2) over bar(1) over bar) sample (x = 0.13), the polarization field is estimated to be approximate to+330 kV/cm at flatband voltage higher than turn-on voltage of this light emitting diode. Published under license by AIP Publishing.
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页数：5
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