Electroluminescence Characterization of (20(2)over-bar1) InGaN/GaN Light Emitting Diodes with Various Wavelengths

被引：24
|
作者：
Chung, Roy B. [1 ]
Lin, You-Da [2 ]
Koslow, Ingrid [1 ]
Pfaff, Nathan [1 ]
Ohta, Hiroaki [1 ]
Ha, Junseok [1 ]
DenBaars, Steven P. [1 ,2 ]
Nakamura, Shuji [1 ,2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 07期
关键词：
BULK GAN SUBSTRATE; HIGH-POWER; QUANTUM-WELLS; SINGLE; POLARIZATION;
D O I：
10.1143/JJAP.49.070203
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical characteristics of InGaN/GaN light emitting diodes (LEDs) grown on (20 (2) over bar1) bulk GaN substrates with wavelengths 469, 487, 510, and 528 nm were investigated. From 2 to 100 mA, the peak emission wavelength for green LEDs blue-shifted by 6.2 nm. Emission spectra widths were almost independent of the injection current. These results suggest that (20 (2) over bar1) LEDs have a smaller polarization field and smaller indium fluctuations in the quantum wells. Optical polarization ratios for the LEDs varied between 0.4 and 0.5, which are larger than reported values. A weak dependence of the polarization ratio on the indium composition was observed. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页码：0702031 / 0702033
页数：3
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