Kinetics of shallow acceptor impact ionization and recombination in p-Ge

被引：0

作者：

Altukhov, I. V. ^{[1
]}

Kagan, M. S. ^{[1
]}

Sinis, V. P. ^{[1
]}

Paprotskiy, S. K. ^{[1
]}

机构：

[1] Russian Acad Sci, VA Kotelnikov Inst Radio Engn & Elect, Moscow 125009, Russia

来源：

TERAHERTZ AND MID INFRARED RADIATION: BASIC RESEARCH AND PRACTICAL APPLICATIONS, WORKSHOP PROCEEDINGS | 2009年

关键词：

GERMANIUM; ELECTRONS; DONORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The time evolution of current in p-Ge doped with shallow acceptors was studied. The dependences of impact ionization and recombination times on electric field and uniaxial pressure were found. The role of Poole-Frenkel ionization of shallow acceptors was analyzed.

引用

页码：57 / 58

页数：2

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