Kinetics of shallow acceptor impact ionization and recombination in p-Ge

被引：0
|
作者：
Altukhov, I. V. [1 ]
Kagan, M. S. [1 ]
Sinis, V. P. [1 ]
Paprotskiy, S. K. [1 ]
机构：
[1] Russian Acad Sci, VA Kotelnikov Inst Radio Engn & Elect, Moscow 125009, Russia
来源：
TERAHERTZ AND MID INFRARED RADIATION: BASIC RESEARCH AND PRACTICAL APPLICATIONS, WORKSHOP PROCEEDINGS | 2009年
关键词：
GERMANIUM; ELECTRONS; DONORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The time evolution of current in p-Ge doped with shallow acceptors was studied. The dependences of impact ionization and recombination times on electric field and uniaxial pressure were found. The role of Poole-Frenkel ionization of shallow acceptors was analyzed.
引用
收藏
页码：57 / 58
页数：2
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