共 50 条
- [1] IMPACT RECOMBINATION OF ELECTRONS VIA DEEP AND SHALLOW ACCEPTORS IN P-TYPE SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (01): : 24 - 27
- [3] EFFECTIVE MECHANISM OF ENERGY RELAXATION OF HOT ELECTRONS IN p-TYPE SEMICONDUCTORS. 1977, 11 (07): : 801 - 804
- [4] AUGER RECOMBINATION IN P-TYPE SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASSES OF ELECTRONS AND HOLES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1981, (09): : 125 - 127
- [7] AUGER RECOMBINATION OF ELECTRONS VIA DEEP AND SHALLOW ACCEPTORS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 132 (01): : 203 - 217
- [8] RECOMBINATION IN P-TYPE SILICON IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1280 - +
- [9] RECOMBINATION OF HOLES AT SHALLOW ACCEPTORS IN P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 888 - +