共 50 条
- [21] AUGER RECOMBINATION IN NARROW-GAP rho -TYPE SEMICONDUCTORS. Soviet physics. Semiconductors, 1981, 15 (07): : 760 - 762
- [22] HYDROGEN PASSIVATION OF SHALLOW ACCEPTOR IMPURITIES AND RADIATION DEFECTS IN P-TYPE SILICON INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (95): : 477 - 481
- [23] HYDROGEN PASSIVATION OF SHALLOW ACCEPTOR IMPURITIES AND RADIATION DEFECTS IN P-TYPE SILICON SHALLOW IMPURITIES IN SEMICONDUCTORS 1988, 1989, 95 : 477 - 481
- [24] LINEAR PHOTOGALVANIC EFFECT IN p-TYPE III-V SEMICONDUCTORS. SHIFT CONTRIBUTION. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1984, 26 (11): : 2020 - 2024
- [26] EFFECTIVE MECHANISM OF ENERGY RELAXATION OF HOT-ELECTRONS IN P-TYPE SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 801 - 804
- [28] Threshold and probability of impact ionization by electrons in narrow-gap p-type semiconductors with highly degenerate holes Physics of the Solid State, 1997, 39 : 240 - 244