Evaluation of commercial ultra-thin SOI substrates using laser confocal inspection system

被引:0
|
作者
Ogura, A [1 ]
Okabayashi, O [1 ]
机构
[1] NEC Corp Ltd, Silicon Syst Res Labs, Sagamihara, Kanagawa 2291198, Japan
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Commercially available ultra-thin (50nm) SOI substrates were evaluated using a laser confocal inspection system. The defect distribution and corresponding defects were observed for both bonded SOI and SIMOX wafers. Some of the defects were marked in the system and evaluated by TEM after the samples were prepared by FIB. The most serious defects observed were voids in both the bonded Sol wafers and the SIMOX wafers. Small defects such as dislocations were also detected. The technique is non-destructive and therefore promising for use in pre- and in-line monitoring systems.
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页码:19 / 24
页数:6
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