Evaluation of commercial ultra-thin SOI substrates using laser confocal inspection system

被引:0
|
作者
Ogura, A [1 ]
Okabayashi, O [1 ]
机构
[1] NEC Corp Ltd, Silicon Syst Res Labs, Sagamihara, Kanagawa 2291198, Japan
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Commercially available ultra-thin (50nm) SOI substrates were evaluated using a laser confocal inspection system. The defect distribution and corresponding defects were observed for both bonded SOI and SIMOX wafers. Some of the defects were marked in the system and evaluated by TEM after the samples were prepared by FIB. The most serious defects observed were voids in both the bonded Sol wafers and the SIMOX wafers. Small defects such as dislocations were also detected. The technique is non-destructive and therefore promising for use in pre- and in-line monitoring systems.
引用
收藏
页码:19 / 24
页数:6
相关论文
共 50 条
  • [21] Ultra-Thin SOI for 20nm node and beyond
    Aulnette, C.
    Schwarzenbach, W.
    Daval, N.
    Bonnin, O.
    Nguyen, B-Y
    Mazure, C.
    Maleville, C.
    Cheng, K.
    Ponoth, S.
    Khakifirooz, A.
    Hook, T.
    Doris, B.
    2011 IEEE INTERNATIONAL SOI CONFERENCE, 2011,
  • [22] Conduction in ultra-thin SOI nanowires prototyped by FIB milling
    Pott, Vincent
    Ionescu, Adrian M.
    MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) : 1718 - 1720
  • [23] Surface roughness and device layer thickness for ultra-thin SOI
    Current, MI
    Malik, IJ
    Fuerfanger, M
    Flat, A
    Sullivan, J
    2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2002, : 111 - 112
  • [24] Simulation of tunneling gate current in ultra-thin SOI MOSFETs
    Fiegna, C
    Abramo, A
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 110 - 113
  • [25] Formation of ultra-thin SOI by dose-energy optimization
    Meng, C
    Xiang, W
    Dong, YM
    Liu, XH
    Yi, WB
    Jing, C
    Xi, W
    2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2002, : 113 - 114
  • [26] Electrical Detection of Trapped Charge Displacements Using an Ultra-Thin SOI Percolation Transistor
    Fleming, S.
    Milne, W. I.
    Hasko, D. G.
    2013 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT 4), 2013, 54 (01): : 215 - 220
  • [27] Threshold voltage calculation in ultra-thin film SOI MOSFETs using the effective potential
    Ramey, SM
    Ferry, DK
    PROCEEDINGS OF THE 2002 2ND IEEE CONFERENCE ON NANOTECHNOLOGY, 2002, : 189 - 192
  • [28] Precise thickness control for ultra-thin SOI in ELTRAN® SOI-EpiTM wafer
    Sato, N
    Kakizaki, Y
    Atoji, T
    Notsu, K
    Miyabayashi, H
    Ito, M
    Yonehara, T
    2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2002, : 209 - 210
  • [29] Ultra-thin flexible ceramic substrates for electronic applications
    Olenick, J.A., 1600, IMAPS-International Microelectronics and Packaging Society (41):
  • [30] Efficient Small-Signal Extraction Technique for Ultra-Thin Body and Ultra-Thin Box FD-SOI transistor
    Maafri, D.
    Yagoub, M. C. E.
    Touhami, R.
    Slimane, A.
    Belaroussi, M. T.
    Raskin, J-P.
    2015 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION (NEMO), 2015,