Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy

被引：5
|
作者：
Bietti, S. [1 ,2 ]
Somaschini, C. [1 ,2 ]
Sarti, E. [1 ,2 ]
Koguchi, N. [1 ,2 ]
Sanguinetti, S. [1 ,2 ]
Isella, G. [3 ,4 ]
Chrastina, D. [3 ,4 ]
Fedorov, A. [3 ,4 ]
机构：
[1] L NESS, I-20125 Milan, Italy
[2] Dipartimento Sci Mat, I-20125 Milan, Italy
[3] L NESS, CNISM, I-22100 Como, Italy
[4] Politecn Milan, Dipartimento Fis, I-22100 Como, Italy
来源：
NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 10期
关键词：
Quantum nanostructures; III-V semiconductors; Si integration; Photoluminescence; CHEMICAL-VAPOR-DEPOSITION; TEMPERATURE LASER OPERATION; ROOM-TEMPERATURE; QUANTUM DOTS; GAAS; DENSITY; GROWTH; SI;
D O I：
10.1007/s11671-010-9689-8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature a parts per thousand currency sign350A degrees C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
引用
收藏
页码：1650 / 1653
页数：4
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