Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy

被引：5

作者：

Bietti, S. ^{[1
,2
]}

Somaschini, C. ^{[1
,2
]}

Sarti, E. ^{[1
,2
]}

Koguchi, N. ^{[1
,2
]}

Sanguinetti, S. ^{[1
,2
]}

Isella, G. ^{[3
,4
]}

Chrastina, D. ^{[3
,4
]}

Fedorov, A. ^{[3
,4
]}

机构：

[1] L NESS, I-20125 Milan, Italy

[2] Dipartimento Sci Mat, I-20125 Milan, Italy

[3] L NESS, CNISM, I-22100 Como, Italy

[4] Politecn Milan, Dipartimento Fis, I-22100 Como, Italy

来源：

NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 10期

关键词：

Quantum nanostructures; III-V semiconductors; Si integration; Photoluminescence; CHEMICAL-VAPOR-DEPOSITION; TEMPERATURE LASER OPERATION; ROOM-TEMPERATURE; QUANTUM DOTS; GAAS; DENSITY; GROWTH; SI;

D O I：

10.1007/s11671-010-9689-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature a parts per thousand currency sign350A degrees C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.

引用

页码：1650 / 1653

页数：4

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