Fabrication of high efficiency III-V quantum nanostructures at low thermal budget on Si

被引：22

作者：

Bietti, S. ^{[1
,2
]}

Somaschini, C. ^{[1
,2
]}

Sanguinetti, S. ^{[1
,2
]}

Koguchi, N. ^{[1
,2
]}

Isella, G. ^{[3
,4
]}

Chrastina, D. ^{[3
,4
]}

机构：

[1] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[2] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy

[3] Politecn Milan, Dipartimento Fis, L NESS, I-22100 Como, Italy

[4] Politecn Milan, CNISM, I-22100 Como, Italy

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 24期

关键词：

aluminium compounds; CMOS integrated circuits; gallium arsenide; III-V semiconductors; light emitting devices; molecular beam epitaxial growth; nanofabrication; nanostructured materials; semiconductor epitaxial layers; semiconductor growth; CHEMICAL-VAPOR-DEPOSITION; MODIFIED DROPLET EPITAXY; MOLECULAR-BEAM EPITAXY; GAAS; DOTS; GE; GROWTH; HETEROSTRUCTURES; DEVICES; LAYERS;

D O I：

10.1063/1.3273860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricate high efficiency GaAs/AlGaAs quantum nanostructure active layer for intersubband detectors and light emitting devices on a silicon substrate. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature <= 350 degrees C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits. The realized quantum nanostructures show optical efficiencies comparable to those achievable with state of the art quantum dot materials grown on GaAs substrates.

引用

页数：3

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