MICROWAVE THERMAL MODULATION OF PHOTOLUMINESCENCE IN III-V SEMICONDUCTORS

被引：18
|
作者：
DELONG, MC [1 ]
VIOHL, I [1 ]
OHLSEN, WD [1 ]
TAYLOR, PC [1 ]
OLSON, JM [1 ]
机构：
[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401
来源：
PHYSICAL REVIEW B | 1991年 / 43卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.43.1510
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of an applied microwave field on low-temperature photoluminescence (PL) have been investigated in epitaxial Ga0.52In0.48P and GaAs. The modulation-frequency dependence of the microwave-modulated PL was compared with the frequency response in nominally identical samples directly heated by an alternating current passing through the sample substrate. We give strong evidence that (1) the mechanism, whereby the microwaves interact with the PL in Ga0.48In0.52P, is via simple heating of the lattice and (2) in superfluid helium the time constant for thermal equilibration of the epilayer to its environment is less than 2-mu-sec, in agreement with theoretical estimates. This thermal-coupling mechanism has been observed in Ga0.52In0.48P, GaAs(x)P1-x, and GaAs1-xSb(x), all of which exhibit a propensity to form ordered structures. The coupling in GaAs, InP, CdS, InP/Ga0.47In0.53As/InP, and GaAs/Al(x)Ga1(-x)As/GaAs is not thermal but may involve impact ionization.
引用
收藏
页码：1510 / 1519
页数：10
相关论文
共 50 条
  • [1] NONTHERMAL MICROWAVE MODULATION OF PHOTOLUMINESCENCE IN III-V-SEMICONDUCTORS
    DELONG, MC
    OHLSEN, WD
    VIOHL, I
    YIN, X
    TAYLOR, PC
    SENGUPTA, D
    STILLMAN, GE
    OLSON, JM
    HARRISON, WA
    [J]. PHYSICAL REVIEW B, 1993, 48 (08): : 5157 - 5166
  • [2] Microwave III-V semiconductors for telecommunications and prospective of the III-V industry
    Wu, CS
    [J]. PROCEEDING OF THE 2002 3RD INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2002, : 223 - 223
  • [3] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS
    GUNN, JB
    [J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91
  • [4] Improvement of the photoluminescence dead layer model in III-V semiconductors
    Hellouin, Y
    Viktorovitch, P
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (02): : 466 - 470
  • [5] THERMAL-OXIDATION OF III-V COMPOUND SEMICONDUCTORS
    MONTEIRO, OR
    EVANS, JW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C468 - C469
  • [6] Thermal and nonthermal melting of III-V compound semiconductors
    Medvedev, Nikita
    Fang, Zhaoji
    Xia, Chenyi
    Li, Zheng
    [J]. PHYSICAL REVIEW B, 2019, 99 (14)
  • [7] Microwave modulated photoluminescence of excitons in III-V semiconductor heterostructures
    Inglefield, CE
    DeLong, MC
    Taylor, PC
    Harrison, WA
    [J]. PROCEEDINGS OF THE THIRD INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER - EXCON '98, 1998, 98 (25): : 531 - 536
  • [8] EPITAXY OF SEMICONDUCTORS III-V
    MIRCEA, A
    [J]. VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1985, 40 (225): : 33 - 45
  • [9] Pores in III-V semiconductors
    Föll, H
    Langa, S
    Carstensen, J
    Christophersen, M
    Tiginyanu, IM
    [J]. ADVANCED MATERIALS, 2003, 15 (03) : 183 - +
  • [10] Oxidation of III-V semiconductors
    Graham, M. J.
    Moisa, S.
    Sproule, G. I.
    Wu, X.
    Landheer, D.
    SpringThorpe, A. J.
    Barrios, P.
    Kleber, S.
    Schmuki, P.
    [J]. CORROSION SCIENCE, 2007, 49 (01) : 31 - 41
12345