CAD methodology for analog static CMOS design automation

被引:0
|
作者
Rudolff, Francois [1 ]
Kussener, Edith [1 ]
Bracmard, Gaeetan [2 ]
机构
[1] ISEN Toulon, CNRS, UMR 6137, L2MP, Maison Technol Pl G Pompidou, F-83000 Toulon, France
[2] ATML Rousset, Zone Ind, F-13106 Rousset, France
关键词
D O I
10.1109/ICECS.2007.4511132
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The computer-aided design (CAD) methodology proposed in this paper, automates analog static CMOS design. This methodology is based on the EKV model which is continuous over the inversion range. This methodology provides accurate description of current drain (error < 10%) with integration of second order effects in charts for simplicity. It explores the whole solution space. Thus, circuits are sized without inversion level constraint and can be optimized unambiguously for given design requirements and given technology. The methodology is illustrated on a classic self-biased compact current reference. The circuit is optimized in supply voltage. The simulation in 0.15 mu m technology gives a minimum supply voltage of 800mV for a current target of 50nA with 10% accuracy.
引用
收藏
页码:882 / +
页数:2
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