Fabrication of Microstripline Wiring for Large Format Transition Edge Sensor Arrays

被引：6
|
作者：
Chervenak, J. A. [1 ]
Adams, J. M. [1 ]
Bailey, C. N. [1 ]
Bandler, S. [1 ]
Brekosky, R. P. [1 ]
Eckart, M. E. [1 ]
Ewin, A. E. [1 ]
Finkbeiner, F. M. [1 ]
Kelley, R. L. [1 ]
Kilbourne, C. A. [1 ]
Porter, F. S. [1 ]
Sadlier, J. E. [1 ]
Smith, S. J. [1 ]
机构：
[1] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 2012年 / 167卷 / 3-4期
关键词：
Transition edge sensor; Fabrication; Large format array;
D O I：
10.1007/s10909-012-0552-4
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed a process to integrate microstripline wiring with transition edge sensors (TES). The process includes additional layers for metal-etch stop and dielectric adhesion to enable recovery of parameters achieved in non-microstrip pixel designs. We report on device parameters in close-packed TES arrays achieved with the microstrip process including R (n) , G, and T (c) uniformity. Further, we investigate limits of this method of producing high-density, microstrip wiring including critical current to determine the ultimate scalability of TES arrays with two layers of wiring.
引用
收藏
页码：547 / 553
页数：7
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