Fabrication of Microstripline Wiring for Large Format Transition Edge Sensor Arrays

被引：6

作者：

Chervenak, J. A. ^{[1
]}

Adams, J. M. ^{[1
]}

Bailey, C. N. ^{[1
]}

Bandler, S. ^{[1
]}

Brekosky, R. P. ^{[1
]}

Eckart, M. E. ^{[1
]}

Ewin, A. E. ^{[1
]}

Finkbeiner, F. M. ^{[1
]}

Kelley, R. L. ^{[1
]}

Kilbourne, C. A. ^{[1
]}

Porter, F. S. ^{[1
]}

Sadlier, J. E. ^{[1
]}

Smith, S. J. ^{[1
]}

机构：

[1] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2012年 / 167卷 / 3-4期

关键词：

Transition edge sensor; Fabrication; Large format array;

D O I：

10.1007/s10909-012-0552-4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a process to integrate microstripline wiring with transition edge sensors (TES). The process includes additional layers for metal-etch stop and dielectric adhesion to enable recovery of parameters achieved in non-microstrip pixel designs. We report on device parameters in close-packed TES arrays achieved with the microstrip process including R (n) , G, and T (c) uniformity. Further, we investigate limits of this method of producing high-density, microstrip wiring including critical current to determine the ultimate scalability of TES arrays with two layers of wiring.

引用

页码：547 / 553

页数：7

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