Band offset measurement of the ZnS/Si(001) heterojunction

被引：0

作者：

Brar, B ^{[1
]}

Steinhoff, R ^{[1
]}

Seabaugh, A ^{[1
]}

Zhou, X ^{[1
]}

Jiang, S ^{[1
]}

Kirk, WP ^{[1
]}

机构：

[1] Raytheon TI Syst, Dallas, TX 75243 USA

来源：

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality ZnS layers on silicon have recently been realized by initiating MBE growth on a vicinal Si (001) surface that has been terminated with a single monolayer (ML) of As. We report the first measurement of the electronic transport properties of the ZnS/As(lML)/n-Si(001) heterostructure. Temperature-dependent current-voltage measurements show that the transport is characterized by an activation energy of 1.00+/-0.04 eV for the Si/ZnS conduction band offset. A similar activation energy of 1.02+/-0.04 eV is obtained for the opposite bias polarity, corresponding to transport over the Al/ZnS Schottky barrier.

引用

页码：167 / 170

页数：4

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