Band offset measurement of the ZnS/Si(001) heterojunction

被引：0
|
作者：
Brar, B [1 ]
Steinhoff, R [1 ]
Seabaugh, A [1 ]
Zhou, X [1 ]
Jiang, S [1 ]
Kirk, WP [1 ]
机构：
[1] Raytheon TI Syst, Dallas, TX 75243 USA
来源：
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-quality ZnS layers on silicon have recently been realized by initiating MBE growth on a vicinal Si (001) surface that has been terminated with a single monolayer (ML) of As. We report the first measurement of the electronic transport properties of the ZnS/As(lML)/n-Si(001) heterostructure. Temperature-dependent current-voltage measurements show that the transport is characterized by an activation energy of 1.00+/-0.04 eV for the Si/ZnS conduction band offset. A similar activation energy of 1.02+/-0.04 eV is obtained for the opposite bias polarity, corresponding to transport over the Al/ZnS Schottky barrier.
引用
收藏
页码：167 / 170
页数：4
相关论文
共 50 条
  • [21] Direct optical measurement of the valence band offset of p+ Si1-x-yGexCy/p- Si (100) by heterojunction internal photoemission
    Chang, CL
    Rokhinson, LP
    Sturm, JC
    EPITAXY AND APPLICATIONS OF SI-BASED HETEROSTRUCTURES, 1998, 533 : 245 - 250
  • [22] The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction
    Li, Yapeng
    Li, Yingfeng
    Wang, Jianyuan
    He, Zhirong
    Zhang, Yonghong
    Yu, Qi
    Hou, Juncai
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2017, 217 : 1 - 5
  • [23] Band gap and heterojunction discontinuities of pseudomorphic Si1-x-yGexCy alloy layers on Si(001)
    Wu, LQ
    Huang, MC
    Zhu, ZZ
    Li, KH
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) : 2165 - 2169
  • [24] Band offset predictions for strained group IV alloys:: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001)
    Galdin, S
    Dollfus, P
    Aubry-Fortuna, V
    Hesto, P
    Osten, HJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (06) : 565 - 572
  • [25] Measurement of the valence-band offset at the epitaxial MgO-GaAs(001) heterojunction by x-ray photoelectron spectroscopy -: art. no. 042108
    Lu, Y
    Le Breton, JC
    Turban, P
    Lépine, B
    Schieffer, P
    Jézéquel, G
    APPLIED PHYSICS LETTERS, 2006, 88 (04) : 1 - 3
  • [26] Band offset engineering for p-SnO/n-mc-Si heterojunction solar cell
    Mandal, Lipika
    Askari, Syed Sadique Anwer
    Kumar, Manoj
    Das, Mukul Kumar
    APPLIED PHYSICS LETTERS, 2020, 116 (23)
  • [27] PERTURBATIVE INTERPRETATION OF THE HETEROJUNCTION BAND-OFFSET PROBLEM
    KANE, EO
    PHYSICAL REVIEW B, 1986, 33 (06): : 4428 - 4431
  • [28] BAND-OFFSET TRANSITIVITY IN STRAINED (001) HETEROINTERFACES
    FOULON, Y
    PRIESTER, C
    PHYSICAL REVIEW B, 1992, 45 (11): : 6259 - 6262
  • [29] MEASUREMENT OF ALP GAP (001) HETEROJUNCTION BAND OFFSETS BY X-RAY PHOTOEMISSION SPECTROSCOPY
    WALDROP, JR
    GRANT, RW
    KRAUT, EA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1617 - 1620
  • [30] Electronic and optical properties of (001)Si/ZnS heterostructures
    Voon, LCLY
    RamMohan, LR
    Soref, RA
    APPLIED PHYSICS LETTERS, 1997, 70 (14) : 1837 - 1839
12345