Band offset measurement of the ZnS/Si(001) heterojunction

被引：0
|
作者：
Brar, B [1 ]
Steinhoff, R [1 ]
Seabaugh, A [1 ]
Zhou, X [1 ]
Jiang, S [1 ]
Kirk, WP [1 ]
机构：
[1] Raytheon TI Syst, Dallas, TX 75243 USA
来源：
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-quality ZnS layers on silicon have recently been realized by initiating MBE growth on a vicinal Si (001) surface that has been terminated with a single monolayer (ML) of As. We report the first measurement of the electronic transport properties of the ZnS/As(lML)/n-Si(001) heterostructure. Temperature-dependent current-voltage measurements show that the transport is characterized by an activation energy of 1.00+/-0.04 eV for the Si/ZnS conduction band offset. A similar activation energy of 1.02+/-0.04 eV is obtained for the opposite bias polarity, corresponding to transport over the Al/ZnS Schottky barrier.
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页码：167 / 170
页数：4
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