The effect of hydrogen on copper nitride thin films deposited by magnetron sputtering

被引：15
|
作者：
Zhang, Guangan [1 ,2 ]
Yan, Pengxun [1 ,2 ]
Wu, Zhiguo [1 ]
Wang, Jun [1 ]
Chen, Jiangtao [1 ]
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 73000, Peoples R China
[2] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 16期
关键词：
copper nitride; thin films; hydrogen; structure; thermal properties;
D O I：
10.1016/j.apsusc.2008.01.156
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Copper nitride thin films were deposited on Si ( 1 0 0) wafers by reactive magnetron sputtering at various H(2)/N(2) ratios. X-ray diffraction measurements show that the films are composed of Cu(3)N crystallites with anti-ReO(3) structure and exhibit preferred orientation of [ 1 0 0] direction. Although the relative composition of the films has obviously changes with the H(2)/N(2) ratios, the orientations of the films keep almost no changes. However, the grain size, lattice parameter and composition of the films are strongly dependent on the H(2)/N(2) ratios. The copper nitride films prepared at 10% H(2)/N(2) ratios show poor stability and large weight gain compared to the copper nitride films prepared at 0% H(2)/N(2) ratios. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：5012 / 5015
页数：4
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