The effect of hydrogen on Cu3N thin films deposited by radio frequency magnetron sputtering

The Cu3N films were synthesized at room temperature by radio frequency magnetron sputtering in various H-2+N-2 mixture atmosphere on a glass substrate. The introduction of hydrogen promoted the crystallization of Cu3N distinctly, and the optimized growth of (100) plane was strong. Compared to the films with no hydrogen introduced, the electrical resistivity decreased by several magnitudes and the optical energy gap decreased notably too. A conspicuous improvement of electrical and optical properties was achieved, but the surface morphology did not gain any modification; on the contrary, the introduction of hydrogen engendered the protuberances on the surface of the films. The thermal stability was investigated by heating the films in vacuum chamber at different temperatures. The films decomposed at 150 degrees C initially and at 250 degrees C entirely; the thermal stability is not as good as Cu3N films with no hydrogen included. The films were characterized by x-ray diffraction, UV-visible spectrum, four-point probe, and field emission scanning electron microscope method. (c) 2006 American Institute of Physics.