An S-band Internally Matched Packaged GaN HEMT with over 720W Peak Power and 58% PAE

被引：0

作者：

Oh, Kwanjin ^{[1
]}

Lee, Sangmin ^{[1
]}

Kim, Heejun ^{[1
]}

Yoon, Heejae ^{[1
]}

机构：

[1] Wavice Inc, Hwaseong Si, South Korea

来源：

2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年

关键词：

High Power; Power Amplifier(PA); S-band; GaN HEMT; Internally Matched FET(IMFET);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design and the characteristics of an S-band High Power internally matched packaged field effect transistor (IMFET) with GaN HEMT are reported. To reduce the size of the IMFET, single layer capacitors (SLC) with high dielectric constant were used. Also, the impedance matching circuits were fabricated on aluminum nitride substrates. The output power, power gain and PAE of the amplifier were measured as 58.57dBm (720W), 10.6dB, and 58%, respectively at 3.4GHz. Due to the compact size of the package, 24mm x 17.4mm, these results show the record high output power per unit area of the package at this frequency.

引用

页码：643 / 646

页数：4

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