C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE

被引：27

作者：

Shigematsu, H. ^{[1
]}

Inoue, Y. ^{[1
]}

Akasegawa, A. ^{[1
]}

Yamada, M. ^{[1
]}

Masuda, S. ^{[1
]}

Kamada, Y. ^{[1
]}

Yamada, A. ^{[1
]}

Kanamura, A. ^{[1
]}

Ohki, T. ^{[1
]}

Makiyama, K. ^{[1
]}

Okamoto, N. ^{[1
]}

Imanishi, K. ^{[1
]}

Kikkawa, T. ^{[1
]}

Joshin, K. ^{[1
]}

Hara, N. ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430197, Japan

来源：

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年

关键词：

C-band; X-band; PAE; GaN; power amplifiers;

D O I：

10.1109/MWSYM.2009.5165934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mu m GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mu m GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GM. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power.

引用

页码：1265 / +

页数：2

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