Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS

被引：1
|
作者：
Shi, Zhangjun [1 ,2 ]
Li, Xiaojin [1 ,2 ]
Sun, Yabin [1 ,2 ]
Shi, Yanlin [1 ,2 ]
机构：
[1] East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China
[2] Shanghai Key Lab Multidimens Informat Proc, Shanghai, Peoples R China
来源：
2021 THE 6TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2021) | 2021年
基金：
中国国家自然科学基金;
关键词：
electro-thermal simulation; SOI-ATG LDMOS; self-heating effect; co-optimization;
D O I：
10.1109/ICICM54364.2021.9660247
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An electro-thermal co-optimization has been carried out on silicon-on-insulator (SOI) accumulation mode trigate (ATG) LDMOS by TCAD simulation. Internal electric field, temperature distribution, critical heat removal path and the thermal resistance of SOI-ATG LDMOS are investigated, providing deep insights into its self-heating mechanism and thermal-aware design. Besides, the junction depth of source/drain, ambient temperature and boundary thermal resistance are optimized to mitigate the self-heating effect (SHE) in SOI-ATG LDMOS. Furthermore, different trench dielectrics are also compared to achieve an electro-thermal co-optimization of SOI-ATG LDMOS.
引用
收藏
页码：210 / 213
页数：4
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