Electro-thermal Investigation on SOI Accumulation Mode Tri-gate LDMOS

被引：1

作者：

Shi, Zhangjun ^{[1
,2
]}

Li, Xiaojin ^{[1
,2
]}

Sun, Yabin ^{[1
,2
]}

Shi, Yanlin ^{[1
,2
]}

机构：

[1] East China Normal Univ, Dept Elect Engn, Shanghai 200241, Peoples R China

[2] Shanghai Key Lab Multidimens Informat Proc, Shanghai, Peoples R China

来源：

2021 THE 6TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2021) | 2021年

基金：

中国国家自然科学基金;

关键词：

electro-thermal simulation; SOI-ATG LDMOS; self-heating effect; co-optimization;

D O I：

10.1109/ICICM54364.2021.9660247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electro-thermal co-optimization has been carried out on silicon-on-insulator (SOI) accumulation mode trigate (ATG) LDMOS by TCAD simulation. Internal electric field, temperature distribution, critical heat removal path and the thermal resistance of SOI-ATG LDMOS are investigated, providing deep insights into its self-heating mechanism and thermal-aware design. Besides, the junction depth of source/drain, ambient temperature and boundary thermal resistance are optimized to mitigate the self-heating effect (SHE) in SOI-ATG LDMOS. Furthermore, different trench dielectrics are also compared to achieve an electro-thermal co-optimization of SOI-ATG LDMOS.

引用

页码：210 / 213

页数：4

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