Optical absorption in random media:: Application to Ga1-xMnxAs epilayers -: art. no. 075306

被引：39
|
作者：
Szczytko, J
Bardyszewski, W
Twardowski, A
机构：
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[2] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland
来源：
PHYSICAL REVIEW B | 2001年 / 64卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.64.075306
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A model to calculate the fundamental absorption edge in heavily doped semiconductors is proposed. The model is based on the assumption that the quasimomentum conservation rule in optical transitions is partially released in random media. This model is applied to transmission data of Ga1-xMnxAs epilayers. The values obtained for the free hole concentration p = 7 x 10(19) cm(-3), and the p-d exchange integral N(o)beta = - 1 eV reproduce reasonably well the fundamental absorption edge of Ga1-xMnxAs.
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页数：8
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