Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

被引：45
|
作者：
Normand, P [1 ]
Kapetanakis, E
Dimitrakis, P
Skarlatos, D
Beltsios, K
Tsoukalas, D
Bonafos, C
Ben Assayag, G
Cherkashin, N
Claverie, A
Van Den Berg, JA
Soncini, V
Agarwal, A
Ameen, M
Perego, M
Fanciulli, M
机构：
[1] NCSR Demokritos, IMEL, Aghia Paraskevi 15310, Greece
[2] Univ Ioannina, Dept Mat Sci & Engn, GR-45110 Ioannina, Greece
[3] Natl Tech Univ Athens, Fac Appl Math & Phys Sci, Athens 15780, Greece
[4] CNRS, CEMES, F-31055 Toulouse, France
[5] Univ Salford, Dept Phys, Salford M5 4WT, Lancs, England
[6] ST Cent R&D Agrate, I-20041 Agrate Brianza, Italy
[7] Axcelis Technol Inc, Beverly, MA 01915 USA
[8] INFM, Lab MDM, I-20041 Agrate Brianza, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 216卷
关键词：
nanocrystals; ion beam synthesis; non-volatile memory; silicon implantation;
D O I：
10.1016/j.nimb.2003.11.039
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：228 / 238
页数：11
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