Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications

被引：9

作者：

Dimitrakis, P. ^{[1
]}

Mouti, A. ^{[2
]}

Bonafos, C. ^{[2
]}

Schamm, S. ^{[2
]}

Ben Assayag, G. ^{[2
]}

Ioannou-Sougleridis, V. ^{[1
]}

Schmidt, B. ^{[3
]}

Becker, J. ^{[4
]}

Normand, P. ^{[1
]}

机构：

[1] NCSR Demokritos, Inst Microelect, Aghia Paraskevi 15310, Greece

[2] Univ Toulouse, CNRS, CEMES, Toulouse, France

[3] Res Ctr Dresden Rossendorf, Dresden, Germany

[4] Cambridge NanoTech Inc, Cambridge, MA USA

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

Ion implantation; Ge nanocrystals; Nanocrystal memory; MOS CAPACITORS;

D O I：

10.1016/j.mee.2009.03.074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Structural and electrical properties of ALD-grown 5 and 7 nm-thick Al2O3 layers before and after implantation of Ge ions (1 keV, 0.5(-1) x 10(16) cm(-2)) and thermal annealing at temperatures in the 700-1050 degrees C range are reported. Transmission Electron Microscopy reveals the development of a 1 rim-thick SiO2-rich layer at the Al2O3/Si substrate interface as well as the formation of Ge nanocrystals with a mean diameter of similar to 5 nm inside the implanted Al2O3 layers after annealing at 800 degrees C for 20 min. Electrical measurements performed on metal-insulator-semiconductor capacitors using Ge-implanted and annealed Al2O3 layers reveal charge storage at low-electric fields mainly due to location of the Ge nanocrystals at a tunnelling distance from the substrate and their spatial dispersion inside the Al2O3 layers. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1838 / 1841

页数：4

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