Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

被引：24
|
作者：
Normand, P [1 ]
Dimitrakis, P
Kapetanakis, E
Skarlatos, D
Beltsios, K
Tsoukalas, D
Bonafos, C
Coffin, H
Benassayag, G
Claverie, A
Soncini, V
Agarwal, A
Sohl, C
Ameen, M
机构：
[1] IMEL, NCSR Demokritos, Aghia Paraskevi 15310, Greece
[2] IMEL, NCSR Demokritos, Aghia Paraskevi 15310, Greece
[3] Univ Ioannina, Dept Mat Sci & Engn, GR-45110 Ioannina, Greece
[4] NTUA, Fac Appl Mathem & Phys Sc, Athens 15780, Greece
[5] CNRS, CEMES, F-31055 Toulouse 4, France
[6] ST Cent R&D Agrate, I-20041 Agrate Brianza, Italy
[7] Axcelis Technol Inc, Beverly, MA 01915 USA
来源：
MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷
关键词：
silicon nanocrystals; ion beam synthesis; silicon implantation; nanocrystal memory; non-volatile memory;
D O I：
10.1016/j.mee.2004.03.043
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent fabrication issues encountered during the synthesis of silicon nanocrystals in thin SiO2 films by the technique of ultra-low energy ion implantation and subsequent thermal treatment (ULE-IBS) are presented. The effects of charge neutralization of the implanted species, energy contamination and post-implantation cleaning process on the electrical and structural properties of the processed oxides are described, with emphasis upon the technological options to control them. While much research is still required for industrial exploitation of ULE-IBS in the fabrication of competitive and reproducible memory structures, promising results for prototype devices aiming at low-voltage non-volatile memory applications have been obtained and are here reported. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：730 / 735
页数：6
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