Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

被引：45

作者：

Normand, P ^{[1
]}

Kapetanakis, E

Dimitrakis, P

Skarlatos, D

Beltsios, K

Tsoukalas, D

Bonafos, C

Ben Assayag, G

Cherkashin, N

Claverie, A

Van Den Berg, JA

Soncini, V

Agarwal, A

Ameen, M

Perego, M

Fanciulli, M

机构：

[1] NCSR Demokritos, IMEL, Aghia Paraskevi 15310, Greece

[2] Univ Ioannina, Dept Mat Sci & Engn, GR-45110 Ioannina, Greece

[3] Natl Tech Univ Athens, Fac Appl Math & Phys Sci, Athens 15780, Greece

[4] CNRS, CEMES, F-31055 Toulouse, France

[5] Univ Salford, Dept Phys, Salford M5 4WT, Lancs, England

[6] ST Cent R&D Agrate, I-20041 Agrate Brianza, Italy

[7] Axcelis Technol Inc, Beverly, MA 01915 USA

[8] INFM, Lab MDM, I-20041 Agrate Brianza, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 216卷

关键词：

nanocrystals; ion beam synthesis; non-volatile memory; silicon implantation;

D O I：

10.1016/j.nimb.2003.11.039

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：228 / 238

页数：11

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