A Low-Cost Low-Power Non-Volatile Memory for RFID Applications

被引：0

作者：

Dagan, Hadar ^{[1
]}

Teman, Adam ^{[1
]}

Fish, Alexander ^{[1
]}

Pikhay, Evgeny

Dayan, Vladislav

Roizin, Yakov

机构：

[1] Ben Gurion Univ Negev, Low Power Circuits & Syst Lab LPC&S, IL-84105 Beer Sheva, Israel

来源：

2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the main obstacles delaying a more widespread use of radio frequency identification (RFID) tags is cost. A critical element of any RFID system is a low power embedded non-volatile memory (NVM) that can be fabricated without additional masks to the core CMOS process. In this paper, we present a 256-bit re-writeable NVM array, implemented in the TowerJazz 0.18 mu m CMOS process using only standard logic process steps and masks. Based on the single-poly C-Flash bitcell, this array achieves an extremely low static power figure of 3.8 mu W during operation cycles.

引用

页码：1827 / 1830

页数：4

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