Band filling in p-doped InAs quantum dot lasers

被引：0
|
作者：
Hutchings, M. [1 ]
O'Driscoll, I. [1 ]
Smowton, P. M. [1 ]
Blood, P. [1 ]
机构：
[1] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, S Glam, Wales
来源：
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements of modal gain spectra show differences in band filling for un-doped and p-doped quantum dot samples which we show is associated with a transition to a non-thermal regime as the temperature is reduced. (C) 2010 Optical Society of America
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页数：2
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