MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon

被引：37

作者：

Liu, Alan Y. ^{[1
]}

Zhang, Chong ^{[2
]}

Snyder, Andrew ^{[3
]}

Lubyshev, Dmitri ^{[3
]}

Fastenau, Joel M. ^{[3
]}

Liu, Amy W. K. ^{[3
]}

Gossard, Arthur C. ^{[1
,2
]}

Bowers, John E. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] IQE Inc, Bethlehem, PA 18015 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2014年 / 32卷 / 02期

关键词：

THRESHOLD CURRENT; SI; SUBSTRATE; BOXES; GAAS;

D O I：

10.1116/1.4864148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the growth of InAs/GaAs quantum dots lasers on silicon emitting in the 1.3 mu m wavelength regime with p-doped active regions. A growth optimization procedure guided by a combination of high and low excitation photoluminescence is presented for the InAs quantum dot growth. Growth conditions derived from this procedure are used to produce high optical quality quantum dots embedded in a GaAs/AlxGa1-xAs graded index separate confinement heterostructure waveguide. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave lasing at low thresholds, with high output power and elevated T-0. (C) 2014 American Vacuum Society.

引用

页数：4

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