Band filling in p-doped InAs quantum dot lasers

被引：0
|
作者：
Hutchings, M. [1 ]
O'Driscoll, I. [1 ]
Smowton, P. M. [1 ]
Blood, P. [1 ]
机构：
[1] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, S Glam, Wales
来源：
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements of modal gain spectra show differences in band filling for un-doped and p-doped quantum dot samples which we show is associated with a transition to a non-thermal regime as the temperature is reduced. (C) 2010 Optical Society of America
引用
收藏
页数：2
相关论文
共 50 条
  • [21] Ultrafast carrier dynamics in p-doped InAs/GaAs Quantum-dot amplifiers
    Cesari, V.
    Langbein, W.
    Borri, P.
    Rossetti, M.
    Fiore, A.
    Mikhrin, S.
    Krestnikov, I.
    Kovsh, A.
    IET OPTOELECTRONICS, 2007, 1 (06) : 298 - 302
  • [22] High performance P-doped InAs tunnel injection quantum dash lasers on InP
    Mi, Z.
    Yang, J.
    Bhattacharya, P.
    2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS, 2006, : 112 - +
  • [23] The effects of thermal annealing on the photoluminescence and DC characteristics of 1.3 μm p-doped InAs/InGaAs/GaAs quantum dot lasers
    Zhao, Hanxue
    Fatt, Yoon Soon
    Yong, Ngo Chun
    Wang, Rui
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2, 2012, 9 (02):
  • [24] Temperature Characteristics of Gain Profiles in 1.3-μm p-Doped and Undoped InAs/GaAs Quantum-Dot Lasers
    Wang, Rui
    Tong, Cun Zhu
    Yoon, Soon Fatt
    Liu, Chong Yang
    Zhao, Han Xue
    Cao, Qi
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) : 1311 - 1313
  • [25] The analytical approach to the multi-state lasing phenomenon in undoped and p-doped InAs/InGaAs semiconductor quantum dot lasers
    Korenev, Vladimir V.
    Savelyev, Artem V.
    Zhukov, Alexey E.
    Omelchenko, Alexander V.
    Maximov, Mikhail V.
    SEMICONDUCTOR LASERS AND LASER DYNAMICS VI, 2014, 9134
  • [26] Comparison of dynamic properties of ground- and excited-state emission in p-doped InAs/GaAs quantum-dot lasers
    Arsenijevic, D.
    Schliwa, A.
    Schmeckebier, H.
    Stubenrauch, M.
    Spiegelberg, M.
    Bimberg, D.
    Mikhelashvili, V.
    Eisenstein, G.
    APPLIED PHYSICS LETTERS, 2014, 104 (18)
  • [27] Improved Performance of 1.3-μm Multilayer P-Doped InAs/InGaAs Quantum Dot Lasers Using Rapid Thermal Annealing
    Cao, Qi
    Tong, Cunzhu
    Yoon, Soon Fatt
    Liu, Chongyang
    Ngo, Chun Yong
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2012, 11 (02) : 231 - 235
  • [28] Growth and characteristics of P-doped InAs tunnel injection quantum-dash lasers on InP
    Mi, Z.
    Yang, J.
    Bhattacharya, P.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1377 - 1379
  • [29] Self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers
    Xu, D. W.
    Tong, C. Z.
    Yoon, S. F.
    Zhao, L. J.
    Ding, Y.
    Fan, W. J.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (06)
  • [30] The effect of p doping in InAs quantum dot lasers
    Sandall, IC
    Smowton, PM
    Walker, CL
    Badcock, T
    Mowbray, DJ
    Liu, HY
    Hopkinson, M
    APPLIED PHYSICS LETTERS, 2006, 88 (11)
12345