Band filling in p-doped InAs quantum dot lasers

被引：0
|
作者：
Hutchings, M. [1 ]
O'Driscoll, I. [1 ]
Smowton, P. M. [1 ]
Blood, P. [1 ]
机构：
[1] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, S Glam, Wales
来源：
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements of modal gain spectra show differences in band filling for un-doped and p-doped quantum dot samples which we show is associated with a transition to a non-thermal regime as the temperature is reduced. (C) 2010 Optical Society of America
引用
收藏
页数：2
相关论文
共 50 条
  • [31] Measurement of the quantum-confined Stark effect in InAs/In(Ga)As quantum dots with p-doped quantum dot barriers
    Mahoney, Joe
    Tang, Mingchu
    Liu, Huiyun
    Abadia, Nicolas
    OPTICS EXPRESS, 2022, 30 (11): : 17730 - 17738
  • [32] Comparison of linewidth enhancement factor between P-doped and undoped quantum-dot lasers
    Kim, Jungho
    Su, Hui
    Minin, Serge
    Chuang, Shun Lien
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1022 - 1024
  • [33] Zero and controllable linewidth enhancement factor in p-doped 1.3 μm quantum dot lasers
    Alexander, Ryan R.
    Childs, David
    Agarwal, Harsh
    Groom, Kristian M.
    Liu, Hui Y.
    Hopkinson, Mark
    Hogg, Richard A.
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2421 - 2423
  • [34] Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers
    Mi, Z
    Fathpour, S
    Bhattacharya, P
    Kovsh, AR
    Mikhrin, SS
    Krestnoikov, IL
    Kozhukhov, AV
    Ledentsov, NN
    Physics and Simulation of Optoelectronic Devices XIII, 2005, 5722 : 60 - 71
  • [35] Temperature dependence of gain characteristics in p-doped 1.3-μm InAs quantum dot laser
    Yukutake, Tetsutaro
    Ishida, Mitsuru
    Hatori, Nobuaki
    Sudo, Hisao
    Yamamoto, Tsuyoshi
    Nakata, Yoshiaki
    Ebe, Hiroji
    Sugawara, Mitsuru
    Arakawa, Yasuhiko
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 563 - 566
  • [36] Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers -: art. no. 211114
    Marko, IP
    Massé, NF
    Sweeney, SJ
    Andreev, AD
    Adams, AR
    Hatori, N
    Sugawara, M
    APPLIED PHYSICS LETTERS, 2005, 87 (21) : 1 - 3
  • [37] Spin dynamics in p-doped InAs/GaAs quantum dots
    Braun, PF
    Lombez, L
    Marie, X
    Urbaszek, B
    Sénès, M
    Amand, T
    Kalevich, V
    Kavokin, K
    Krebs, O
    Voisin, P
    Ustinov, V
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (06): : 1233 - 1236
  • [38] P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers
    Yao Z.
    Chen H.
    Wang T.
    Jiang C.
    Zhang Z.
    Zhongguo Jiguang/Chinese Journal of Lasers, 2021, 48 (16):
  • [39] P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers
    Yao Zhonghui
    Chen Hongmei
    Wang Tuo
    Jiang Cheng
    Zhang Ziyang
    CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2021, 48 (16):
  • [40] Temperature-Insensitive pulse and 120 °C CW Operation of 1550nm-Band p-doped InAs/InGaAlAs Quantum Dot Lasers on InP(311)B Substrate
    Yabuki, Ryota
    Matsumoto, Atsushi
    Katsuhara, Ryumi
    Heinsalu, Siim
    Akahane, Koichi
    Matsushima, Yuichi
    Ishikawa, Hiroshi
    Utaka, Katsuyuki
    2023 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC, 2023,
12345