Modulation doped InGaAsP quantum well laser emitting at 1.55 μm

A number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise, in a modulation-doped InGaAsP quantum well (QW) laser emitting at 1.55 mum have been theoretically investigated. The results indicate that the relaxation oscillation frequency for a p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers, the linewidth enhancement factor of a p-type modulation doped QW laser is reduced to 1/2 that of an undoped MQW laser and the relative intensity noise is reduced by a factor of > 10 dB compared to that for undoped MQW lasers. (C) 2001 American Institute of Physics.