Modulation doped InGaAsP quantum well laser emitting at 1.55 μm

被引：2
|
作者：
Choudhury, N [1 ]
Dutta, NK [1 ]
机构：
[1] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 01期
关键词：
D O I：
10.1063/1.1376403
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A number of parameters, such as gain, modulation response, linewidth enhancement factor and relative intensity noise, in a modulation-doped InGaAsP quantum well (QW) laser emitting at 1.55 mum have been theoretically investigated. The results indicate that the relaxation oscillation frequency for a p-type modulation doped QW laser is enhanced by a factor of more than 2 compared to that for undoped MQW lasers, the linewidth enhancement factor of a p-type modulation doped QW laser is reduced to 1/2 that of an undoped MQW laser and the relative intensity noise is reduced by a factor of > 10 dB compared to that for undoped MQW lasers. (C) 2001 American Institute of Physics.
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页码：38 / 42
页数：5
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