HIGH VOLTAGE NLDMOS WITH MULTIPLE-RESURF STRUCTURE TO ACHIEVE IMPROVED ON-RESISTANCE

被引：0

作者：

Yang, Shao-Ming ^{[1
]}

Hema, E. P. ^{[1
]}

Mrinal, Aryadeep ^{[1
]}

Amanullah, Md ^{[1
]}

Sheu, Gene ^{[1
]}

Chen, P. A. ^{[2
]}

机构：

[1] Asia Univ, Dept Comp Sci & Informat Engn, 500 Lioufeng Rd, Taichung 41354, Taiwan

[2] Nuvoton Technol Corp, Taichung, Taiwan

来源：

2015 China Semiconductor Technology International Conference | 2015年

关键词：

LDMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present high voltage NLDMOS structure with multiple RSEURF concepts. The NLDMOS is based on 0.35 mu m BCD process. The multiple RESURF device base on charge balance theory using P-top and N-top to achieve high breakdown voltage and low on-resistance. The 2D simulation result compares the conventional single RESURF NLDMOS structure and the new structure with multiple RESURF devices. The new device concept help to improve the on-resistance up to 20% were as keeping the breakdown voltage still in the acceptable range for 40V rated device. The 2D simulation is using by process simulator Tsuprem4 and Medici to verify the device concept and identify the electrical characteristics.

引用

页数：3

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