A Comparative Study for the Junction Temperature of Green Light-Emitting Diodes

被引:9
|
作者
Ozluk, Burak [1 ]
Muslu, A. Mete [1 ]
Arik, Mehmet [1 ]
机构
[1] Ozyegin Univ, Dept Mech Engn, TR-34662 Istanbul, Turkey
关键词
Forward voltage technique; green light-emitting diode (LED); junction temperature measurement; LED; LED lens; thermal imaging;
D O I
10.1109/TCPMT.2019.2929172
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Solid-state lighting devices offer a wide variety of color options applicable for general and automotive lighting, various display systems, and a number of niche applications. As they get smaller, generated heat fluxes become more intense and induce serious lifetime and performance issues. Although the light output from light-emitting diodes (LEDs) is the most efficient at a narrow optical spectrum compared with conventional lighting sources, they are still not adequate to satisfy consumer demands due to considerable amounts of lost energy and emerging thermal issues. On the other hand, it is possible to achieve effective thermal solutions if the junction temperature of LEDs is precisely determined. A number of techniques have been proposed for the junction temperature measurement of LEDs such as forward voltage change and infrared (IR) thermal imaging. In this study, green LEDs were studied to observe optothermal interactions using a number of proposed junction temperature measurement techniques. The effect of an LED lens on junction temperature and optical extraction was investigated by examining the change in the thermal and optical properties of an LED chip after the LED lens was removed. In addition, the results of the green LED were compared with a 450-nm blue LED and verified with numerical findings. As a result, it has been determined that the thermal behavior of LEDs is significantly affected by electrical conditions, since the junction temperature of green and blue LEDs has risen by around 45% after the operating current has been increased from 200 to 500 mA.
引用
收藏
页码:2024 / 2035
页数:12
相关论文
共 50 条
  • [11] Method for determining the junction temperature of alternating current light-emitting diodes
    Hwu, F. -S.
    Sheu, G. -J.
    Lin, M. -T.
    Chen, J. -C.
    IET SCIENCE MEASUREMENT & TECHNOLOGY, 2009, 3 (02) : 159 - 164
  • [12] Junction temperature measurements in deep-UV Light-Emitting Diodes
    Xi, Y
    Xi, JQ
    Gessmann, T
    Shah, JM
    Kim, JK
    Schubert, EF
    Fischer, AJ
    Crawford, MH
    Bogart, KHA
    Allerman, AA
    GaN, AIN, InN and Their Alloys, 2005, 831 : 37 - 42
  • [13] Junction Temperature Measurement on the Light-Emitting Diodes Lamp for Space Applications
    Lu, W.
    Zhang, T.
    He, S. M.
    Zhang, B.
    Li, N.
    Liu, S. S.
    PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010), 2010, : 131 - 132
  • [14] Theoretical Investigation of Efficient Green Tunnel-Junction Light-Emitting Diodes
    Kuo, Yen-Kuang
    Shih, Ya-Hsuan
    Chang, Jih-Yuan
    Chen, Fang-Ming
    Lee, Ming-Lun
    Sheu, Jinn-Kong
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (01) : 75 - 78
  • [15] ac impedance of polymer light-emitting electrochemical cells and light-emitting diodes: a comparative study
    Li, YF
    Gao, J
    Yu, G
    Cao, Y
    Heeger, AJ
    CHEMICAL PHYSICS LETTERS, 1998, 287 (1-2) : 83 - 88
  • [16] Junction temperature measurement of light-emitting diodes using temperature-dependent capacitance
    Zhao Yu
    Wei Ai-Xiang
    Liu Jun
    ACTA PHYSICA SINICA, 2015, 64 (11)
  • [17] Junction temperature measurement of light-emitting diodes by voltage-temperature relation method
    Yang, Y. K.
    Lien, W. C.
    Huang, Y. C.
    Chen, N. C.
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 1248 - 1249
  • [18] The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes
    Chen, Wei-Jen
    Kuo, Da-Chuan
    Hung, Cheng-Wei
    Ke, Chih-Chun
    Shen, Hui-Tang
    Wang, Jen-Cheng
    Wu, Ya-Fen
    Nee, Tzer-En
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XV, 2007, 6468
  • [19] Relationships between junction temperature, electroluminescence spectrum and ageing of light-emitting diodes
    Vaskuri, Anna
    Karha, Petri
    Baumgartner, Hans
    Kantamaa, Olli
    Pulli, Tomi
    Poikonen, Tuomas
    Ikonen, Erkki
    METROLOGIA, 2018, 55 (02) : S86 - S95
  • [20] Method for measuring the mean junction temperature of alternating current light-emitting diodes
    Hwu, F. S.
    Yang, C. H.
    Chen, J. C.
    MEASUREMENT SCIENCE AND TECHNOLOGY, 2011, 22 (04)